MSEMITEK power semiconductor components and modules

MSEMITEK power semiconductors: low-voltage and super junction MOSFETs, Field-Stop IGBTs, Silicon Carbide SiC diodes, and rectifier components.

MSEMITEK low-voltage Trench MOSFET power transistors

The MSEMITEK low-voltage Trench MOSFET family is engineered for switching power conversion demanding exceptional electrical efficiency. Advanced trench gate architecture slashes on-state drain-to-source resistance and curtails conductive heat losses during heavy current operations.

Drain-to-source voltage ratings spanning 20V to 100V for secondary power conversion
Continuous drain currents reaching 100A accommodated within compact SOP-8 footprints
Ultra-low typical on-state resistance RDS(on) measured in single-digit milliohms
Deployment across synchronous rectification, brushless motor drives, and battery protection

MSEMITEK Shielded Gate Trench SGT MOSFET transistors

MSEMITEK Shielded Gate Trench SGT MOSFET power components deliver an optimized figure-of-merit FOM balance. The integrated shield structure reduces gate-to-drain Miller capacitance, enabling ultra-fast switching transitions while mitigating transient voltage spikes.

Drain breakdown voltages ranging from 30V to 150V for high-frequency DC-DC converters
Continuous current ratings up to 220A housed in thermal power packages like PDFN5x6
Reduced gate charge parameters simplifying pulse-width modulation gate driver circuitry
Reliable operation in server computing power modules, telecom racks, and EV chargers

MSEMITEK high-voltage Super Junction MOSFET components

MSEMITEK high-voltage Super Junction MOSFET devices incorporate alternating p-n column charge-balance architectures to equalize internal electric fields. This enables up to a ten-fold reduction in specific on-resistance compared with legacy planar high-voltage structures.

Voltage ratings of 600V, 650V, 700V, 800V, and 950V tailored for industrial AC mains
Minimal dynamic switching losses optimized for active power factor correction PFC circuits
Rugged avalanche capability withstanding severe transient overvoltages from line surges
Versatile packaging options including TO-220, isolated TO-220F, TO-247, and surface TO-263

MSEMITEK high-voltage Planar MOSFET power components

MSEMITEK high-voltage Planar MOSFET transistors deliver proven silicon reliability and high tolerance against inductive surge overstresses. These devices provide rugged, cost-effective switching foundations for industrial flyback converters and auxiliary power topologies.

Breakdown voltage capabilities extending from 500V to 1200V for automation power units
Stable electrical transfer characteristics across junction temperatures reaching 150°C
Robust structural die integrity during aggressive unclamped inductive switching cycles
Dependable foundations for auxiliary switch-mode power supplies in CNC machine tooling

MSEMITEK Field-Stop IGBT discretes and modules

MSEMITEK Field-Stop IGBT devices blend simplified voltage-driven gate control with minimal forward saturation voltage drops. Thin-wafer micro-trench technology with field-stop doping suppresses turn-off current tails, eliminating switching energy waste in power units.

Voltage classes of 650V and 1200V supporting discrete collector currents up to 50A
Low collector-to-emitter saturation voltage Vce(sat) starting from 1.56V at rated current
Integrated co-packaged fast recovery freewheeling diode with soft recovery dynamics
Applications: variable frequency inverters, welding power sources, UPS, and servo drives

MSEMITEK Silicon Carbide SiC Schottky diodes and MOSFETs

MSEMITEK third-generation Silicon Carbide SiC power devices operate at elevated switching frequencies and extreme thermal conditions. The near-zero reverse recovery charge of SiC Schottky diodes dramatically slashes power dissipation across conversion stages.

SiC Schottky diodes rated at 650V and 1200V up to 10A exhibiting zero reverse recovery
High-voltage SiC MOSFET transistors at 650V, 750V, and 1200V featuring ultra-low RDS(on)
Junction temperature endurance reaching 175°C mounted in Kelvin-source TO-247-4L packages
Target domains: photovoltaic inverters, EV rapid charging stations, and battery storage

Semiconductor development milestones and MSEMITEK enterprise standing

Shenzhen Msemitek Semiconductor Co., Ltd., founded in 2014 in Shenzhen, specializes in the design, packaging, and parametric testing of power semiconductor devices.

The enterprise holds official standing as a National High-Tech Enterprise and is cataloged among national Little Giant industrial leaders.

The corporate portfolio spans silicon structures and third-generation silicon carbide dies.

With domestic engineering centers operating across Shenzhen, Shanghai, and Suzhou, the manufacturer continuously advances wafer fabrication disciplines, ensuring tight tolerances for switching speed and avalanche ruggedness.

Low-voltage and shielded gate Trench and SGT MOSFET power components

For secondary conversion stages, synchronous rectification, and motor controllers, MSEMITEK engineers low-voltage Trench MOSFET and shielded gate SGT MOSFET components.

The Shielded Gate Trench architecture integrates a shielding electrode that diminishes Miller capacitance and gate charge requirements.

This ensures minimal dynamic switching dissipation at high conversion frequencies while stabilizing switching in DC-DC converters. Devices are packaged in SOP-8, PDFN3x3, PDFN5x6, and TO-252 form factors, handling continuous currents up to 220 amperes alongside ultra-low on-state channel resistance.

High-voltage Super Junction and rugged Planar MOSFET technologies

Within AC-DC power converters and power factor correction circuits, MSEMITEK Super Junction MOSFET components rated from 600V to 950V provide core switching efficiency. By implementing alternating p-n charge-balance columns, the technology reduces specific channel resistance multiple times.

For auxiliary flyback supplies and industrial relay circuits, the company produces rugged Planar MOSFET devices handling voltages up to 1200V.

These transistors maintain high tolerance against inductive voltage flyback spikes during inductive load disconnection and operate reliably at high ambient temperatures.

Insulated gate bipolar transistors MSEMITEK Field-Stop IGBT lineup

To drive industrial machinery, CNC servo drives, and inverter welding units, the plant provides IGBT discretes and power modules spanning 650V and 1200V. Thin-wafer processing and micro-trench field-stop architectures shorten minority carrier lifetime and suppress turn-off current tails.

Low collector-to-emitter saturation voltage Vce(sat) from 1.56V mitigates conduction heat buildup under heavy electrical currents. Integrated anti-parallel freewheeling diodes with soft recovery dynamics eliminate high-frequency electromagnetic interference within bridge switching arrangements.

Wide-bandgap Silicon Carbide SiC Schottky diodes and SiC MOSFETs

MSEMITEK third-generation wide-bandgap components encompass Silicon Carbide SiC Schottky diodes and MOSFET transistors engineered for solar inverters, energy storage systems, and fast charging infrastructure.

Silicon carbide features a broad bandgap, elevated breakdown fields, and superior thermal dissipation.

SiC diodes exhibit virtually zero reverse recovery charge, extinguishing switching losses and cooling opposing active switches. High-performance SiC MOSFETs support junction temperatures up to 175°C, sustaining stable switching timing throughout high-frequency resonant power topologies.

MS OpenLab testing facility and device reliability qualification

To validate semiconductor endurance, the company established the MS OpenLab testing center covering over 1000 square meters backed by investments exceeding 40 million yuan. In March 2024, the facility completed comprehensive audits, receiving formal national laboratory accreditation from CNAS.

The testing center incorporates four specialized departments: device electrical verification, environmental stress testing, failure mode analysis, and system application testing.

Programs follow JEDEC, IEC, and AEC-Q101 methodologies, verifying component stability against thermal cycling and humidity.

MSEMITEK and model names are trademarks of their respective owners and are used only to identify the equipment for which we source parts. SpareX is not an official dealer, distributor or representative of MSEMITEK and is not affiliated with the trademark owner. Origin, documents and warranty are stated for each item in the quotation.