SwissSEM Power Semiconductors

SwissSEM Research Infrastructure and Technology Heritage

SwissSEM (a dedicated subsidiary of Sun.King Technology Group) is a premier semiconductor enterprise focusing on the R&D, structural simulation, and advanced packaging of high-power discrete devices and multichip modules.

Combining Swiss power engineering design methodologies with state-of-the-art Chinese automated packaging lines, SwissSEM operates cleanrooms equipped with ultrasonic thick-wire bonding, void-free vacuum reflow soldering, and laser substrate dicing.

Stringent quality verification spans the complete manufacturing chain: automated wafer prober testing, dynamic switching test bays, high-temperature reverse bias (HTRB) burn-in, and power cycling stress testing.

Modules are fully qualified to international standard IEC 60747 and the rigorous automotive standard AQG 324.

Generation-7 i23 IGBT Chip Architecture

The i23 series IGBT chips utilize generation-7 thin-wafer technology with a fine-pitch Field Stop Trench cell topology.

Precision thinning of the silicon substrate combined with backside ion implantation creates an optimal balance between low conduction losses (collector-emitter saturation voltage Vce(sat) around 1.5–1.65V) and low turn-off energy losses Eoff.

The trench cell structure maximizes channel density and enhances electron-hole plasma accumulation near the emitter during conduction.

Upon turn-off, carrier extraction occurs cleanly with a minimal tail current, mitigating excessive junction temperature rise under elevated PWM switching frequencies.

Characteristics of 1700V High-Voltage Silicon

In demanding 690V industrial wind converters, rolling stock traction inverters, and heavy mining drives, power devices must withstand severe voltage transients and rugged thermal cycles.

SwissSEM 1700V dies feature an expanded reverse-bias safe operating area (RBSOA), safely interrupting twice rated current under full DC-link bus voltage.

Short-circuit withstand time (tsc) is guaranteed above 10 microseconds at 150°C junction temperature, granting ample margin for desaturation protection circuits in gate drivers to trigger safely.

A positive temperature coefficient for Vce(sat) ensures automatic, stable current sharing when multiple chips are paralleled inside high-current modules.

Silicon Carbide (SiC) MOSFET Advantages

Silicon carbide, as a wide-bandgap semiconductor, possesses a critical breakdown electric field nearly an order of magnitude higher than pure silicon.

This enables SwissSEM 1200V SiC MOSFET dies to utilize a much thinner drift layer, achieving ultra-low specific on-state resistance Rds(on) per square millimeter.

Because majority carriers carry the load, there is virtually zero minority carrier storage charge and zero diode-like turn-off tail current.

Switching losses drop by up to 80% compared with silicon IGBTs, permitting switching frequencies up to 50–100 kHz and significantly shrinking bulky inductive filter chokes and cooling hardware.

ED Series Modules in EconoDual 3 Packaging

SwissSEM ED series modules are housed in the industry-benchmark EconoDual 3 footprint (122×62 mm) featuring a solid copper baseplate. The half-bridge configuration integrates M6 power screw terminals and auxiliary control pins available with solder or Press-Fit terminations.

Insulating substrates use high-purity Al2O3 or high-thermal-conductivity Si3N4 ceramic DBC tiles.

Internal stray inductance is engineered down to 15–18 nH, suppressing switching voltage overshoot at continuous currents up to 900A.

An integrated NTC thermistor is galvanically isolated from main power paths, providing high-precision real-time substrate temperature feedback for thermal management loops.

EP Series Compact Industrial Power Modules

The EP family incorporates baseplate-less modules adhering to standard EasyPack and EconoPACK outlines.

Direct mounting of the ceramic DBC substrate to the heatsink lowers thermal mass and eliminates solder fatigue between baseplates and ceramics during cyclic loads, ideally serving 20–125 kW solar string inverters and industrial servo drives.

Available topologies include sixpack three-phase inverters, brake choppers, and three-level neutral-point-clamped (NPC/ANPC) designs.

Solder-free Press-Fit pins eliminate thermal stress on PCB control boards during assembly and guarantee vibration-resistant electrical contacts under harsh industrial environments.

HEEV Automotive Direct-Cooled Traction Modules

The HEEV series is tailored specifically for EV main propulsion inverters operating across 400V and 800V battery architectures.

The module features an integral copper baseplate with a high-density pin-fin field that drops directly into the vehicle liquid cooling manifold, washed directly by water-glycol coolant.

Direct pin-fin cooling eliminates thermal grease interfaces, slashing junction-to-fluid thermal resistance Rth(j-f) by over 30%.

Employing silver sintering chip attachment and heavy copper bonding leads, HEEV modules survive over 100,000 deep thermal shock cycles, supporting vehicle service lives exceeding 300,000 kilometers.

EVD and BEVD Auxiliary Power Modules

EVD and BEVD intelligent power modules manage high-voltage auxiliary drives in electric passenger and commercial vehicles: electric air conditioning compressors, power steering pumps, cabin heaters, and auxiliary DC/DC converters.

Encapsulated in high-temperature transfer-molded epoxy with comparative tracking index (CTI) ratings above 600V, these modules incorporate onboard shunt current sensing, gate driver undervoltage lockout (UVLO), and thermal shutdown circuits, significantly streamlining control PCB routing.

Thermal Sizing and Mechanical Installation Guidelines

When mounting SwissSEM power modules to heatsinks, ensure heatsink contact flatness within 50 µm across 100 mm and surface roughness Rz below 10 µm. Apply thermal interface material using a precision stencil to maintain a uniform 50–100 µm grease layer.

Tighten heatsink mounting and terminal screws using calibrated torque screwdrivers in a cross-wise, two-stage sequence adhering strictly to specified torque ranges in the technical manual. Asymmetrical torque risks micro-cracking the internal ceramic DBC substrates.

Inquiry Guidelines and Delivery Scope

To prepare an accurate component quotation, specify package style (bare dies on tape/wafer or packaged modules), circuit topology, voltage class, continuous collector current, switching frequency, and cooling type (forced air or liquid).

For replacement inquiries, provide complete part numbers and markings from module nameplates. Deliveries include electrostatic-shielded trays, batch factory acceptance certificates, and technical engineering support for gate driver integration.